High Al-content AlGaN channel high electron mobility transistors on silicon substrate

The rapidly increasing power demand, downsizing of electronics and material specific limitation silicon has led to development AlGaN/GaN heterostructures. Commercial GaN devices are best available for radio frequency (RF) high voltage switching applications. Emerging AlxGa1-xN channel based heterostructures promising enhance the limits next generation devices. In this work, we report on study electrical performance AlGaN HEMTs-on-Silicon using various Al content. fabricated exhibited outstanding buffer breakdown electric field above 2.5 MV/cm considering submicron thin grown substrate. Furthermore, also experimentally demonstrate temperature operation HEMTs.